Three-dimensional integrated coil inductor on silicon for high-frequency applications

被引：0

作者：

Yeo, KS ^{[1
]}

Tan, HP ^{[1
]}

Ma, JG ^{[1
]}

Do, MA ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2001年 / 31卷 / 01期

关键词：

inductor on-chip; CMOS integrated circuits; quality factor;

D O I：

10.1002/mop.1346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the results of a new 3-D high-performance coil inductor, which was fabricated using standard 0.25 mum CMOS technology. Comparative evaluation with the conventional spiral inductor was performed in terms of quality factor (Q), inductance (L), and chip area. (C) 2001 John Wiley & Sons, Inc.

引用

页码：23 / 24

页数：2

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