A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

被引：125
|
作者：
Zeng, Fanming [1 ]
An, Judy Xilin [1 ]
Zhou, Guangnan [1 ]
Li, Wenmao [1 ]
Wang, Hui [1 ]
Duan, Tianli [2 ]
Jiang, Lingli [1 ]
Yu, Hongyu [1 ,3 ,4 ]
机构：
[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
[2] Southern Univ Sci & Technol, Mat Characterizat & Preparat Ctr, Shenzhen 518055, Peoples R China
[3] Shenzhen Key Lab Third Generat Semicond, Shenzhen 518055, Peoples R China
[4] GaN Device Engn Technol Res Ctr Guangdong, Shenzhen 518055, Peoples R China
来源：
ELECTRONICS | 2018年 / 7卷 / 12期
关键词：
AlGaN; GaN; high-electron mobility transistor (HEMTs); p-GaN; enhancement-mode; RESISTANCE OHMIC CONTACTS; FIELD-EFFECT TRANSISTORS; HIGH-THRESHOLD-VOLTAGE; GATE LEAKAGE CURRENT; LOW DEFECT DENSITY; SURFACE PASSIVATION; PIEZOELECTRIC POLARIZATION; RF CHARACTERISTICS; ION-IMPLANTATION; CURRENT COLLAPSE;
D O I：
10.3390/electronics7120377
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.
引用
收藏
页数：20
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