Scalable Analytical Model of 1.7 THz Cut-off Frequency Schottky Diodes Integrated in 55nm BiCMOS Technology

被引：3

作者：

Gidel, Vincent ^{[1
,2
,3
]}

Gianesello, Frederic ^{[1
]}

Chevalier, Pascal ^{[1
]}

Avenier, Gregory ^{[1
]}

Guitard, Nicolas ^{[1
]}

Milon, Victor ^{[1
]}

Buczko, Michel ^{[1
]}

Legrand, Charles-Alex ^{[1
]}

Luxey, Cyril ^{[2
]}

Ducournau, Guillaume ^{[3
]}

机构：

[1] STMicroelectronics, Paris, France

[2] Univ Nice Sophia A, Polytech Lab, Nice, France

[3] CNRS, UMR 8520, IEMN, Paris, France

来源：

2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2019年

关键词：

Schottky diode; modeling; THz; MILLIMETER-WAVE; BARRIER DIODE;

D O I：

10.1109/rfic.2019.8701728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an innovative Schottky diode architecture is proposed and implemented in 55 nm BiCMOS technology. A State-of-the-art 1.7 THz cut-off frequency is measured and an analytical scalable model is proposed and experimentally validated paving the way for further performance improvement. In addition, this analytical model can be integrated in a Design Kit library in order to enable sub-THz Schottky diode-based circuit designs in advanced BiCMOS.

引用

页码：23 / 26

页数：4

共 9 条

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