Gain-flattened broadband Er3+-doped silica fibre amplifier with low noise characteristics

被引：17
|
作者：
Yamada, M [1 ]
Ono, H [1 ]
Ohishi, Y [1 ]
机构：
[1] NTT, Optoelect Labs, Tokai, Ibaraki 3191193, Japan
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 18期
关键词：
D O I：
10.1049/el:19981273
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have developed a broadband silica-based EDFA with a wide flat amplification bandwidth of 66nm, an average gain of 17dB and a low noise figure of < 5dB, by employing a hybrid configuration and a gain equaliser.
引用
收藏
页码：1747 / 1748
页数：2
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