GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth

被引：10

作者：

Lin, N. M. ^{[1
]}

Chang, S. J. ^{[1
,2
,3
]}

Shei, S. C. ^{[4
]}

Lai, W. C. ^{[5
]}

Yang, Y. Y. ^{[5
]}

Lin, W. C. ^{[5
]}

Lo, H. M. ^{[2
]}

机构：

[1] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[4] Natl Taiwan Univ, Dept Elect Engn, Tainan 700, Taiwan

[5] Natl Cheng Kung Univ, Inst Electro Opt Sci & Engn, Tainan 70101, Taiwan

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2011年 / 29卷 / 18期

关键词：

Air voids; GaN; light-emitting diodes (LEDs); laser scribing; lateral etching; TracePro; LIGHT-EMITTING-DIODES; NITRIDE-BASED LEDS; MQW LEDS; SAPPHIRE; OUTPUT;

D O I：

10.1109/JLT.2011.2162821

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the formation of air voids at GaN/cone-shaped pattern sapphire substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like air voids were formed with an average height of 0.98 and 1.9 mu m, respectively, on top of each cone of the substrate. It was also found that we can enhance LED output power by 11.5% by etching the wafers for 20 min. It was also found that the simulated results agree well with the experimentally observed data.

引用

页码：2831 / 2835

页数：5

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