Linear magnetic field response spin valve with perpendicular anisotropy ferromagnet layer

In this letter, we present a novel concept for a linear magnetoresistance sensor using a spin valve with the free and reference ferromagnetic layers having out of plane and in plane magnetic anisotropies, respectively. The giant magnetoresistance of such a device is measured with the electrical current perpendicular to the film plane resulting in a linear magnetoresistance of up to 2% with an applied field of 1000 Oe. This design is highly advantageous, in terms of sensor cost, space usage, and for the fabrication of a three dimensional magnetic field sensor. (c) 2008 American Institute of Physics.