Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates

被引：4
|
作者：
Jang, JH
Cueva, G
Dumka, DC
Hoke, WE
Lemonias, PJ
Fay, P
Adesida, I
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA
[3] Raytheon RF Components, Andover, MA 01810 USA
[4] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 11期
关键词：
D O I：
10.1049/el:20010474
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and performance of metamorphic InGaAs/InGaAlAs/InAlAs double heterojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500pA at 5V bias, a responsivity of 0.6 A/W, and a -3 dB bandwidth of 38 GHz for 1.55 mum light have been achieved by using a large bandgap drift region in conjunction with a digitally graded bandgap layer.
引用
收藏
页码：707 / 708
页数：2
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