High coercivity SmFeSiC films fabricated by multilayer sputtering

被引：5
|
作者：
Zhang, SY
Shan, ZS
Liu, Y
Sellmyer, DJ
Zhao, TY
Zhao, JG
Shen, BG
机构：
[1] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA
[2] UNIV NEBRASKA,CTR MAT RES & ANAL,DEPT ENGN MECH,LINCOLN,NE 68588
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/20.539077
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SmFeSiC thin films have been obtained by sputtering SmFe/C(Si) multilayers with a Ta underlayer on Si substrates and subsequently annealing at 700 degrees C. The coercivity of the SmFeSiC films strongly depends on the sputtering and annealing conditions. The influence of the thickness of the Ta underlayer, the thickness ratio of SmFe to C(Si), the argon pressure and heat treatment In- plane coercivities up to 7.2 kOe and squareness of 0.94 were obtained.
引用
收藏
页码：4550 / 4552
页数：3
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