Influence of drying temperature on morphology of MAPbI3 thin films and the performance of solar cells

被引:24
|
作者
Zhang, Hao [1 ]
Wang, Yalan [1 ]
Wang, Hong [1 ]
Ma, Meiyang [1 ]
Dong, Shuai [1 ]
Xu, Qingyu [1 ,2 ]
机构
[1] Southeast Univ, Sch Phys, Nanjing 211189, Jiangsu, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Drying temperature; Surface roughness; Wettability; Grain size; Morphology; LEAD HALIDE PEROVSKITES; GRAIN-BOUNDARIES; BASE ADDUCT; CH3NH3PBI3; EFFICIENCY; STABILITY; GROWTH;
D O I
10.1016/j.jallcom.2018.09.223
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photoelectric conversion efficiency of organic-inorganic perovskite solar cells has been rapidly raised and attracted great attention in recent years. The quality of perovskite films is vital for the performance of devices. We used the anti-solvent method to prepare CH3NH3PbI3 thin films by spin coating and dried them at various temperature to transform adduct MAI center dot PbI2 center dot DMSO into CH3NH3PbI3 . We researched in detail on the relationship between surface morphology of MAPbI(3) thin films fabricated by the antisolvent method and various drying temperature. We found that surface roughness and grain size of CH3NH3PbI3 films together increased with increasing drying temperature. The larger grain size could efficiently reduce crystal boundaries which is advantageous for the suppression of photo-induced charge carrier recombination resulting in increase of FF. However, increase of surface roughness resulted in larger contact area at interface which might produce more tarp states and poorer wettability of HTM solution leading in decrease of Jsc . Surface morphology of MAPbI(3) layer on the performance of solar cell devices is also an important research issue. By optimizing the drying temperature to 60 degrees C, the highest efficiency of 14.4% was achieved for the CH3NH3PbI3 -based solar cell devices. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:511 / 518
页数:8
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