First-principles studies of interlayer exchange coupling in (Ga, Mn)As-based diluted magnetic semiconductor multilayers

被引：11

作者：

Luo, M. ^{[1
]}

Tang, Z. ^{[1
]}

Zheng, J. ^{[2
]}

Zhu, Z. Q. ^{[1
]}

Chu, J. H. ^{[1
]}

机构：

[1] E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ China, Shanghai 200241, Peoples R China

[2] E China Normal Univ, Supercomp Ctr, Shanghai 200062, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 05期

关键词：

III-V SEMICONDUCTORS; MAGNETORESISTANCE; SUPERLATTICES; ENERGY;

D O I：

10.1063/1.3476456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interlayer exchange coupling (IEC) in a series model diluted magnetic semiconductor multilayers consisting of two magnetic (Ga, Mn)As layers separated by nondoped or Be-doped GaAs nonmagnetic spacers is studied by first-principles calculations. For the GaAs spacers without Be doping, the IEC is always ferromagnetic and is well described by the Ruderman-Kittle-Kasuya Yoshida interaction based on a two-band model for a gaped system. For the Be-doped GaAs spacers, the IEC is found to be tunable and the antiferromagnetic IEC is achieved via Be-doping in the interfaces between the (Ga, Mn)As layers and the spacers. (C) 2010 American Institute of Physics. [doi:10.1063/1.3476456]

引用

页数：4

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