Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

被引:24
|
作者
Anwar, Muhammad Shoaib [1 ,2 ]
Bukhari, Syed Zaighum Abbas [1 ]
Ha, Jang-Hoon [1 ]
Lee, Jongman [1 ,2 ]
Song, In-Hyuck [1 ,2 ]
Kim, Young-Wook [3 ]
机构
[1] Korea Inst Mat Sci KIMS, Ceram Mat Div, 797 Changwon Daero, Changwon Si 51508, Gyeongsangnam D, South Korea
[2] Univ Sci & Technol UST, Dept Adv Mat Engn, Daejeon, South Korea
[3] Univ Seoul, Dept Mat Sci & Engn, Funct Ceram Lab, Seoul, South Korea
基金
新加坡国家研究基金会;
关键词
silicon carbide (SiC); electrical resistivity control; microstructure; porosity (%); processing conditions; FLOW CHANNEL INSERTS; MICROWAVE-ABSORPTION PROPERTIES; RESEARCH-AND-DEVELOPMENT; SINTERED SIC CERAMICS; IN-SITU GROWTH; MECHANICAL-PROPERTIES; THERMOELECTRIC PROPERTIES; THERMAL-PROPERTIES; FLEXURAL STRENGTH; SANDWICH MATERIAL;
D O I
10.1111/ijac.14034
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Porous silicon carbide (SiC)-based ceramics are widely used in numerous applications of technical importance owing to their exceptional structural (e.g., excellent chemical, mechanical, and thermal stability) and functional (e.g., controlled electrical resistivity) properties. Porous SiC with controlled electrical resistivity is required for various advanced applications, for example, power electronic devices, semiconductor processing parts, fusion reactors, thermoelectric energy conversion, electromagnetic shielding, and environmental applications such as heatable filters. The electrical properties of sintered porous SiC are significantly affected by its chemical composition, processing conditions, and microstructure. This article reviews the influence of certain critical factors, such as the polytype, doping conditions, porosity (%), additive composition (oxide additives, element additives, metal nitride/carbide additives, etc.), and processing conditions on the electrical resistivity of porous SiC. Novel applications of porous SiC with controlled electrical resistivity are also discussed in this review.
引用
收藏
页码:1814 / 1840
页数:27
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