Grain boundary characteristics and stress-induced damage morphologies in sputtered and electroplated copper films

被引:0
|
作者
Park, H [1 ]
Hwang, SJ [1 ]
Oh, KH [1 ]
Joo, YC [1 ]
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
来源
MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2003 | 2003年 / 766卷
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Various Cu films were fabricated using sputtering and electroplating with and without additive, and their surface damages after annealing were investigated. After annealing at 435degreesC, the difference between damage morphologies of the films was observed. In some films stress-induced grooves along the grain boundaries were observed, while in the others voids at the grain boundary triple junctions were observed. It was also observed that the stress-induced groove was formed along the high energy grain boundaries. To explain the morphological difference of surface damages, a simple parameter considering the contributions of grain structures and grain boundary characteristics to surface and grain boundary diffusions is suggested. The effective grain boundary area, which is a function of grain size, film thickness and the fraction of high energy grain boundaries, played a key role in the morphological difference.
引用
收藏
页码:397 / 402
页数:6
相关论文
共 50 条
  • [1] Stress-induced surface damage and grain boundary characteristics of sputtered and electroplated copper thin films
    Park, H
    Hwang, SJ
    Joo, YC
    ACTA MATERIALIA, 2004, 52 (08) : 2435 - 2440
  • [2] Effect of grain boundary and texture on stress-induced surface damage in copper thin films
    Park, H
    Kim, DY
    Hwang, SJ
    Joo, YC
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (05) : 1257 - 1262
  • [3] The effect of grain boundary characteristics on microstructure and stress void evolution in electroplated and sputtered Cu films
    Joo, YC
    Hwang, SJ
    Park, H
    THERMEC'2003, PTS 1-5, 2003, 426-4 : 3481 - 3486
  • [4] Stress-induced grain boundary migration in polycrystalline copper
    Bloomfield, Max O.
    Bentz, Daniel N.
    Cale, Timothy S.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (03) : 249 - 263
  • [5] Stress-Induced Grain Boundary Migration in Polycrystalline Copper
    Max O. Bloomfield
    Daniel N. Bentz
    Timothy S. Cale
    Journal of Electronic Materials, 2008, 37 : 249 - 263
  • [6] Evolution of stress-induced surface damage and stress-relaxation of electroplated Cu films at elevated temperatures
    Hwang, SJ
    Koike, J
    Joo, YC
    PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 475-479 : 3641 - 3646
  • [7] Anisotropy of grain boundary energies as cause of abnormal grain growth in electroplated copper films
    Paik, JM
    Park, YJ
    Yoon, MS
    Lee, JH
    Joo, YC
    SCRIPTA MATERIALIA, 2003, 48 (06) : 683 - 688
  • [9] Grain boundary misorientation angles and stress-induced voiding in oxide passivated copper interconnects
    Nucci, JA
    Keller, RR
    Field, DP
    ShachamDiamand, Y
    APPLIED PHYSICS LETTERS, 1997, 70 (10) : 1242 - 1244
  • [10] Suppression of Stress-Induced Voiding by Controlling Microstructure of Cu Electroplated Films
    Muranaka, Seiji
    Omori, Kazuyuki
    Moriy, Kenichi
    Maekawa, Kazuyoshi
    Shibata, Ryuji
    Suzumura, Naohito
    Kudo, Shuichi
    Fujisawa, Masahiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (05)