Dark I-V-T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells

被引：59
|
作者：
Hussein, R [1 ]
Borchert, D [1 ]
Grabosch, G [1 ]
Fahrner, WR [1 ]
机构：
[1] Fern Univ Hagen, Chair Elect Dev, D-58084 Hagen, Germany
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 69卷 / 02期
关键词：
heterojunction; two-diode model; dark current;
D O I：
10.1016/S0927-0248(00)00385-8
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Heterojunction solar cells have been manufactured by depositing n-type a-Si:H on p-type 1-2 Omega cm Cz single-crystalline silicon substrates. An efficiency of 14.2% has been obtained for 1 cm(2) solar cells by using a simple (Al/(p) c-Si/(n) a-Si:Hi/ITO/metal grid) structure. With an additional surface texturing, we have reached an efficiency of 15.3% for 1 cm2 solar cells. We have investigated the dark IV-curves in order to contribute to a better understanding of the basis of solar cells. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：123 / 129
页数：7
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