Wet-etch release process for silicon-micromachined structures using polystyrene microspheres for improved yield

被引:1
|
作者
Mantiziba, F
Gory, I
Skidmore, G
Gnade, B
机构
[1] Univ Texas, Erik Jonsson Sch Engn & Comp Sci, Richardson, TX 75083 USA
[2] Zyvex Corp, Richardson, TX 75081 USA
关键词
etching; wafer bonding;
D O I
10.1109/JMEMS.2005.844800
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
One of the final steps in fabricating microelectromechanical devices often involves a liquid-etch release process. Capillary forces during the liquid evaporation stage after the wet-etch process can pull two surfaces together resulting in adhesion of suspended microstructures to the supporting substrate. This release-related adhesion can greatly reduce yields. In this paper, we present a wet-etch release method that uses polystyrene microspheres in the final rinse liquid. The polystyrene microspheres act as physical barriers between the substrate and suspended microstructures during the final liquid evaporation phase. A plasma-ashing process is utilized to completely remove the polystyrene microspheres from the microstructure surfaces. Using this process, release yields > 90% were achieved, as compared to yields of 20-50% when the polystyrene microspheres were not included. This release process is inexpensive, easy to implement, and is effective for both single-crystal and polycrystalline silicon MEMS devices.
引用
收藏
页码:598 / 602
页数:5
相关论文
共 12 条
  • [1] A wet-etch method with improved yield for realizing polysilicon resistors in batch fabrication of MEMS pressure sensor
    Singh, Kulwant
    Gupta, Sanjeev K.
    Azam, Amir
    Akhtar, J.
    SENSOR REVIEW, 2009, 29 (03) : 260 - 265
  • [2] Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates
    Lim, Zheng Hui
    Chrysler, Matthew
    Kumar, Abinash
    Mauthe, Jacob P.
    Kumah, Divine P.
    Richardson, Chris
    LeBeau, James M.
    Ngai, Joseph H.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 38 (01):
  • [3] Fabrication of a silicon micromachined capacitive microphone using a dry-etch process
    Ning, YB
    Mitchell, AW
    Tait, RN
    SENSORS AND ACTUATORS A-PHYSICAL, 1996, 53 (1-3) : 237 - 242
  • [4] Integration of benzocyclobutene polymers and silicon micromachined structures using anisotropic wet etching
    Ghalichechian, N
    Modafe, A
    Ghodssi, R
    Lazzeri, P
    Micheli, V
    Anderle, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (05): : 2439 - 2447
  • [5] An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask
    Pal, P.
    Sato, K.
    Gosalvez, M. A.
    Shikida, M.
    MEMS 2008: 21ST IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, 2008, : 327 - +
  • [6] A high-yield drying process for surface-micromachined structures using magnetostatic forces
    Liu, C
    Tsao, T
    Tai, YC
    SENSORS AND MATERIALS, 1999, 11 (02) : 71 - 86
  • [7] Fabrication of step-edge structures on R-plane sapphire using a selective wet etch process
    Levy, P
    Nicoletti, S
    Correra, L
    Cervera, M
    Bianconi, M
    Biscarini, F
    Corticelli, F
    Gabilli, E
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1997, 19 (8-9): : 1389 - 1395
  • [8] Design, fabrication, and characterisation of a silicon microneedle array for transdermal therapeutic delivery using a single step wet etch process
    Howells, Olivia
    Blayney, Gareth J.
    Gualeni, Benedetta
    Birchall, James C.
    Eng, Pey F.
    Ashraf, Huma
    Sharma, Sanjiv
    Guy, Owen J.
    EUROPEAN JOURNAL OF PHARMACEUTICS AND BIOPHARMACEUTICS, 2022, 171 : 19 - 28
  • [9] Damage-Free Back Channel Wet-Etch Process in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Using a Carbon-Nanofilm Barrier Layer
    Luo, Dongxiang
    Zhao, Mingjie
    Xu, Miao
    Li, Min
    Chen, Zikai
    Wang, Lang
    Zou, Jianhua
    Tao, Hong
    Wang, Lei
    Peng, Junbiao
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (14) : 11318 - 11325
  • [10] Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
    Faraz, Tahsin
    van Drunen, Maarten
    Knoops, Harm C. M.
    Mallikarjunan, Anupama
    Buchanan, Iain
    Hausmann, Dennis M.
    Henri, Jon
    Kessels, Wilhelmus M. M.
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (02) : 1858 - 1869