Effects of ambient gas on dielectric constant of sputtered SrTiO3 epitaxial thin films

被引：19

作者：

Komatsu, S ^{[1
]}

Abe, K ^{[1
]}

Fukushima, N ^{[1
]}

机构：

[1] Toshiba Co Ltd, R&D Ctr, Mat & Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 10期

关键词：

SrTiO3 thin film; epitaxial film; dielectric constant; rf magnetron sputtering; sputtering ambient gas; X-ray diffraction; bias field dependence;

D O I：

10.1143/JJAP.37.5651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial strontium titanate (SrTiO3) thin films were fabricated on Pt/MgO substrates by rf magnetron sputtering in O-2 (100 sccm) and Ar/O-2 (40/10 sccm) ambients. Films prepared in an O-2 ambient exhibit an anomalous dielectric constant (epsilon(r) - 450), larger than that of the bulk single crystal. An investigation was carried out on the relationship between stoichiometry, deposition rate, and peening effects and this anomalous dielectric constant. We conclude that the anomalous dielectric constant is attributable to the lattice elongation along the c-axis caused due to the peening effect of O species.

引用

页码：5651 / 5654

页数：4

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