Growth Activation Energy of Ti-Based SnO2 + SbOx Electrode Solid Solution and Its Activation Mechanism

被引:0
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作者
Liang Zhenhai [1 ]
Ding Yongbo [1 ]
Sun Yanfa [1 ]
机构
[1] Taiyuan Univ Technol, Coll Chem & Chem Engn, Taiyuan 030024, Peoples R China
关键词
Ti-based SnO2+SbOx solid solution; growth activation energy; activation mechanism; THIN-FILMS; ELECTROCHEMICAL-BEHAVIOR; INTERMEDIATE LAYER; ANODE; PRECURSOR;
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ti based oxide anode with SnO2+SbOx was prepared by a thermal decomposition method. The SnO2+SbOx solid solution was characterized with TG/DTA, XRD and XPS. The growth activation energy of SnO2+SbOx solid solution was calculated and its activation mechanism was discussed. Meanwhile the expected lifetime of the oxide anode under high current density of 2 A/cm(2) and in 0.5 mol/L H2SO4 solution was determined by a fast life method. The results show that the free electrons and oxygen vacancy produced by the N-type semiconductor and P-type semiconductor from Sb-doped SnO2 enhance the electrode conductivity and increase its expected lifetime to 30 h. The oxygen vacancy and too low intergranular rotary driving force are the main reasons for the decrease to 12.63 kJ/mol of the growth activation energy of SnO2+SbOx solid solution. Thus, SnO2+SbOx electrode solid solution is a fine electrode material with good conductivity and high stability.
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页码:1265 / 1269
页数:5
相关论文
共 17 条
  • [1] Influence of the concentration of Sb2O3 and the viscosity of the precursor solution on the electrical and optical properties of SnO2 thin films produced by the Pechini method
    Bernardi, MIB
    Soledade, LE
    Santos, IA
    Leite, ER
    Longo, E
    Varela, JA
    [J]. THIN SOLID FILMS, 2002, 405 (1-2) : 228 - 233
  • [2] Electrochemical behavior of novel Ti/IrOx-Sb2O5-SnO2 anodes
    Chen, GH
    Chen, XM
    Yue, PL
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (17): : 4364 - 4369
  • [3] ERIC M, 2001, ELECTROCHIM ACTA, V46, P629
  • [4] Huang YT, 2006, RARE METAL MAT ENG, V35, P1610
  • [5] JOHN OMB, 1984, J ELECTROCHEMICAL SO, V131, P290
  • [6] Grain growth kinetics of nanocrystalline SnO2 for long-term isothermal annealing
    Lai, JKL
    Shek, CH
    Lin, GM
    [J]. SCRIPTA MATERIALIA, 2003, 49 (05) : 441 - 446
  • [7] Liang ZH, 2001, J INORG MATER, V16, P183
  • [8] Liang ZH, 2006, RARE METAL MAT ENG, V35, P1605
  • [9] Vacancies in solids and the stability of surface morphology
    McCarty K.F.
    Nobel J.A.
    Bartelt N.C.
    [J]. Nature, 2001, 412 (6847) : 622 - 625
  • [10] Scaling behavior of grain-rotation-induced grain growth
    Moldovan, D
    Yamakov, V
    Wolf, D
    Phillpot, SR
    [J]. PHYSICAL REVIEW LETTERS, 2002, 89 (20)