Interband cascade laser progress - art. no. 69090X

被引:1
|
作者
Bewley, W. W. [1 ]
Canedy, C. L. [1 ]
Kim, M. [1 ]
Kim, C. S. [1 ]
Nolde, J. A. [1 ]
Larrabee, D. C. [1 ]
Lindle, J. R. [1 ]
Vurgaftman, I. [1 ]
Meyer, J. R. [1 ]
机构
[1] USN, Res Lab, Washington, DC 20375 USA
来源
关键词
diode laser; interband cascade laser; quantum well; mid-infrared; photodiode; long-wavelength infrared;
D O I
10.1117/12.766908
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recent advances in the development of mid-IR antimonide type-II "W" interband cascade lasers have led to a considerably improved high-temperature operation of the devices. We report an experimental investigation of four interband cascade lasers with wavelengths spanning the mid-infrared spectral range, i.e., 2.9-5.2 mu m near room temperature in pulsed mode. One broad-area device had a pulsed threshold current density of only 3.8 A/cm(2) at 78 K (lambda = 3.6 mu m) and 590 A/cm(2) at 300 K (X = 4.1 mu m). The room-temperature threshold for the shortest-wavelength device (lambda = 2.6-2.9 mu m) was even lower, 450 A/cm(2). A cavity-length study of the lasers emitting at 3.6-4.1 mu m yielded an internal loss varying from 7.8 cm(-1) at 78 K to 24 cm-1 at 300 K, accompanied by a decrease of the internal efficiency from 77% to 45%. Preliminary cw testing led to a narrow-ridge device from one of the wafers with emission at lambda = 4.1 mu m operating to 288 K, a new record for interband devices in this wavelength range.
引用
收藏
页码:X9090 / X9090
页数:10
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