55GHz EAM bandwidth and beyond in InP active-passive photonic integration platform

被引：0
|
作者：
Trajkovic, M. [1 ]
Blache, F. [2 ,3 ]
Debregeas, H. [2 ,3 ]
Augustin, L. M. [4 ]
den Haan, E. [4 ]
Williams, K. A. [1 ]
Leijtens, X. J. M. [1 ]
机构：
[1] Eindhoven Univ Technol, Inst Photon Integrat, NL-5600 MB Eindhoven, Netherlands
[2] Thales Res & Technol, III V Lab, Joint Lab Nokia Bell Labs, Campus Polytech,1 Ave Augustin Fresnel, F-91767 Palaiseau, France
[3] CEA Leti, Campus Polytech,1 Ave Augustin Fresnel, F-91767 Palaiseau, France
[4] SMART Photon, NL-5612 AX Eindhoven, Netherlands
来源：
2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate 50GHz and above 55GHz E/O bandwidth for 100 mu m and 50 mu m-long electro-absorption modulator, within the offerings of the generic InP active-passive integration platform. Discussion on going even further in bandwidth is presented.
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