Effects of Thermal Cycling on the Mechanical Properties of Gold Wire Bonding

被引:0
|
作者
Yusoff, Wan Yusmawati Wan [1 ]
Jalar, Azman [1 ]
Othman, Norinsan Kamil [2 ]
Rahman, Irman Abdul [2 ]
机构
[1] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect, Bangi 43600, Malaysia
[2] Univ Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, Bangi 43600, Malaysia
关键词
gold wire; micromechanical properties; nanoindentation; thermal cycle; NANOINDENTATION; GROWTH; INDENTATION; LOAD;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The mechanical properties of gold wire bonding are subjected to thermal cycling (TC) test has been investigated. Gold wire bonding was experienced to temperature cycle of (-65) degrees C to 150 degrees C for 10, 100, and 1000 cycles. In order to determine the mechanical properties of gold wire, nanoindentation test was performed. A constant load nanoindentation test was carried out at the center of the gold wire to investigate hardness and reduced modulus. The load-depth curve for the thermal cycled gold wire bond displayed apparent discontinuities during loading as compared to the as-received gold wire bond. The hardness value has increased after the gold wire bond subjected to thermal cycle whilst, the hardness value has decreased with the increment of the TC cycle number. For reduced modulus, the values increased with increase of the TC cycle number. The decrease in the hardness value is in line with theoretical grain size coarsening following thermal treatment. These nanoindentation results are important in assessing the strength of gold wire bond after exposure to the thermal cycles.
引用
收藏
页码:521 / 524
页数:4
相关论文
共 50 条
  • [1] Effects of dopant, temperature, and strain rate on the mechanical properties of micrometer gold-bonding wire
    D. S. Liu
    Y. C. Chao
    Journal of Electronic Materials, 2003, 32 : 159 - 165
  • [2] Effects of dopant, temperature, and strain rate on the mechanical properties of micrometer gold-bonding wire
    Liu, DS
    Chao, YC
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (03) : 159 - 165
  • [3] Effect of Mechanical Characteristics of Gold Wire on Microstructure and Properties of Ball Bonding
    Feifei, Kang
    Wenyan, Zhou
    Jianshu, Yu
    Xingqiao, Ji
    Jia, Wang
    Xubo, Chen
    Jianqiang, Luo
    Chen, Liang
    Yongjin, Wu
    Hongying, Pei
    Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2022, 51 (10): : 3632 - 3637
  • [4] Mechanical properties and microstructure of Ca-doped gold bonding wire
    Saraswati
    Sritharan, T
    Breach, CD
    Wulff, F
    Mhaisalkar, SG
    PROCEEDINGS OF 5TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, 2003, : 569 - 573
  • [5] Effect of Mechanical Characteristics of Gold Wire on Microstructure and Properties of Ball Bonding
    Kang, Feifei
    Zhou, Wenyan
    Yu, Jianshu
    Ji, Xingqiao
    Jia, Wang
    Chen, Xubo
    Luo, Jianqiang
    Chen, Liang
    Wu, Yongjin
    Pei, Hongying
    RARE METAL MATERIALS AND ENGINEERING, 2022, 51 (10) : 3632 - 3637
  • [6] Thermal fatigue analysis of gold wire bonding solder joints in MEMS pressure sensors by thermal cycling tests
    Zhang, Yunfan
    Wu, Kangkang
    Li, Hui
    Shen, Shengnan
    Cao, Wan
    Li, Feng
    Han, Jinzhe
    MICROELECTRONICS RELIABILITY, 2022, 139
  • [7] Effects of calcium and palladium on mechanical properties and stored energy of hard-drawn gold bonding wire
    Chew, YH
    Wong, CC
    Breach, CD
    Wulff, F
    Mhaisalkar, SG
    Pang, CI
    Saraswati
    THIN SOLID FILMS, 2004, 462 : 346 - 350
  • [8] Gold bonding wire properties and their influence on ball bonding
    Drack, H
    Ainouz, L
    MICROELECTRONICS JOURNAL, 1996, 27 (08) : R19 - R22
  • [9] A study on the reliability and thermo-mechanical properties of gold ribbon wire bonding
    Tan, CW
    Chan, YC
    Liu, HD
    Leung, BNW
    54TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2004, : 377 - 382
  • [10] Thermal-mechanical behavior of the bonding wire for a power module subjected to the power cycling test
    Hung, T. Y.
    Chiang, S. Y.
    Huang, C. J.
    Lee, C. C.
    Chiang, K. N.
    MICROELECTRONICS RELIABILITY, 2011, 51 (9-11) : 1819 - 1823