A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon

被引：20

作者：

Ertler, C ^{[1
]}

Schürrer, F ^{[1
]}

机构：

[1] Graz Tech Univ, Inst Theoret Phys, A-8010 Graz, Austria

来源：

JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL | 2003年 / 36卷 / 33期

关键词：

D O I：

10.1088/0305-4470/36/33/304

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new method for solving the Boltzmann transport equation is introduced. The method is based on a discontinuous spline approximation of the distribution function in the whole phase space. This procedure enables us to avoid the widely used P-N-approximation for the angle dependence of the distribution function, so that we are able to treat strong anisotropies. The method is applied to a nonparabolic multivalley model of silicon, which allows for the investigation of the anisotropic high field transport of electrons in n-type silicon. The results are compared to experimental data and Monte Carlo simulations.

引用

页码：8759 / 8774

页数：16

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