The Suppression of Stray output of Multi-Beam Broadband Klystron

被引:0
|
作者
Ding, Yaogen [1 ]
Shen, Bin [1 ]
Ding, Haibing [1 ]
Cao, Jing [1 ]
Wu, Di [1 ]
Wang, Chunyue [1 ]
机构
[1] Chinese Acad Sci, Inst Elect, 19 Beisihuan Xilu, Beijing 100190, Peoples R China
关键词
Multi-Beam Klystrons (MBKs); Stray Outputs; Returning electron; two cavity klystron amplifier;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The purity of output spectrum of high power microwave vacuum electronic devices is very important for the microwave electronic system. The stray outputs with frequency in or near the operating frequency band have been observed in some Multi-Beam Klystron (MBK). The exits of the stray outputs have serious influence on the normal operation of the microwave electronic systems. The variation.f stray outputs with different operating frequency observed in an S band MBK was described, and the reasons for generating the stray outputs were analyzed by using 1D klystron code in this paper. The reflecting electrons and secondary electrons caused by the interception of electron beam on gap head of the cavity are responsible for the stray outputs. They will be accelerated by RF electric field on the cavity gap in reverse direction, and return back to previous cavity. The retuning electrons provide the feedback way between successive two cavities, and generate oscillation, which will be amplified by following cavities and form stray outputs. The stray outputs can be reduced or suppressed by decreasing the number.f retuning electrons. It can be realized by making small slots on the suiface of the gap head. The new MBK with slots on the gap head was made and tested, the power level of the stray outputs are less than 70dBc.
引用
收藏
页数:2
相关论文
共 50 条
  • [1] The Research on the Low Peak Power Multi-Beam Broadband Klystron
    Ding, Yaogen
    Gao, Dongping
    Shen, Bin
    Zhang, Zhiciiang
    2016 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC), 2016,
  • [2] Research progress on C-band broadband Multi-Beam Klystron
    Ding, Yaogen
    Zhu, Yunshu
    Yin, Xiulin
    Sun, Xiaoxin
    Shen, Bin
    Miao, Yizhen
    Wang, Caiying
    2006 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE HELD JOINTLY WITH 2006 IEEE INTERNATIONAL VACUUM ELECTRON SOURCES, 2006, : 301 - +
  • [3] Research Progress on S-band Broadband Multi-Beam Klystron
    Ding, Yaogen
    Shen, Bin
    Cao, Jin
    Miao, Yizhen
    2009 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE, 2009, : 537 - 538
  • [4] Simulation study for efficiency optimization of multi-beam klystron output cavity
    Ostovar, M.
    Arand, B. A.
    Ahmadiannamin, S.
    Sadeghipanah, A.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2023, 94 (07):
  • [5] Some Technical Problems of the C-band Broadband Multi-Beam Klystron
    Ding, Yaogen
    Ding, Haibing
    Shen, Bin
    Miao, Yizhen
    2013 IEEE 14TH INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC), 2013,
  • [6] Research progress on multi-beam klystron
    Ding, YG
    Peng, J
    Zhu, YS
    Shi, SM
    Zhao, JJ
    Jiang, ZB
    Ying, XL
    Bao, ML
    ICMWFST '96 - 1996 4TH INTERNATIONAL CONFERENCE ON MILLIMETER WAVE AND FAR INFRARED SCIENCE AND TECHNOLOGY, PROCEEDINGS, 1996, : 185 - 187
  • [7] Preliminary study of the characteristic of multi-beam in intense multi-beam relativistic klystron
    Liu Zhen-Bang
    Jin Xiao
    Huang Hua
    Chen Huai-Bi
    Wang Gan-Ping
    ACTA PHYSICA SINICA, 2012, 61 (24)
  • [8] CAD design for multi-beam klystron broad BW power output system
    Zhang, FZ
    IVESC2004: THE 5TH INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE PROCEEDINGS, 2004, : 329 - 329
  • [9] The Research on RF Output Envelope of C-Band Multi-Beam Klystron
    Ding, Yaogen
    Cao, Jin
    Sun, Xiaoxin
    Shen, Bin
    Ding, Haibing
    IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE, 2014, : 331 - 332
  • [10] Progress of an S-band High Average Power Broadband Multi-beam Klystron
    Gao, Dongping
    Ding, Yaogen
    Zhang, Zhaochuan
    Shen, Bin
    Zhang, Zhiqiang
    Cao, Jin
    Gu, Honghong
    Wang, Caiying
    Wang, Feng
    IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE, 2014, : 117 - 118