Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates (vol 93, pg 5592, 2003)

被引：1
|
作者：
Lee, HN [1 ]
Hesse, D [1 ]
Zakharov, N [1 ]
Lee, SK [1 ]
Gösele, U [1 ]
机构：
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Saale, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 03期
关键词：
D O I：
10.1063/1.1592316
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2148 / 2148
页数：1
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