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A 12b 600MS/s Pipelined SAR and 2x-Interleaved Incremental Delta-Sigma ADC with Source-Follower-Based Residue-Transfer Scheme in 7nm FinFET
被引:4
|
作者
:
Baek, Seungyeob
论文数:
0
引用数:
0
h-index:
0
机构:
Samsung Elect, Hwasung, South Korea
Samsung Elect, Hwasung, South Korea
Baek, Seungyeob
[
1
]
Jang, Ilhoon
论文数:
0
引用数:
0
h-index:
0
机构:
Samsung Elect, Hwasung, South Korea
Samsung Elect, Hwasung, South Korea
Jang, Ilhoon
[
1
]
Choi, Michael
论文数:
0
引用数:
0
h-index:
0
机构:
Samsung Elect, Hwasung, South Korea
Samsung Elect, Hwasung, South Korea
Choi, Michael
[
1
]
Roh, Hyungdong
论文数:
0
引用数:
0
h-index:
0
机构:
Samsung Elect, Hwasung, South Korea
Samsung Elect, Hwasung, South Korea
Roh, Hyungdong
[
1
]
Lim, Woongtaek
论文数:
0
引用数:
0
h-index:
0
机构:
Samsung Elect, Hwasung, South Korea
Samsung Elect, Hwasung, South Korea
Lim, Woongtaek
[
1
]
Cho, Youngjae
论文数:
0
引用数:
0
h-index:
0
机构:
Samsung Elect, Hwasung, South Korea
Samsung Elect, Hwasung, South Korea
Cho, Youngjae
[
1
]
Shin, Jongshin
论文数:
0
引用数:
0
h-index:
0
机构:
Samsung Elect, Hwasung, South Korea
Samsung Elect, Hwasung, South Korea
Shin, Jongshin
[
1
]
机构
:
[1]
Samsung Elect, Hwasung, South Korea
来源
:
2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)
|
2021年
/ 64卷
关键词
:
D O I
:
10.1109/ISSCC42613.2021.9366051
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:172 / +
页数:3
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2016 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC),
2016,
59
: 470
-
U662
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