Diffusion barrier performance of novel RuTiN material for high-density volatile memory capacitor

被引：0

作者：

Yoon, DS ^{[1
]}

Roh, JS

Lee, SM

Baik, HK

机构：

[1] Hynix Semicond Inc, Memory Res & Dev Div, Kyonggi Do 467701, South Korea

[2] Kangwon Natl Univ, Dept Adv Mat Sci & Engn, Chunchon 200701, South Korea

[3] Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea

来源：

ACTA MATERIALIA | 2003年 / 51卷 / 09期

关键词：

new design concept; RuTiN barrier; capacitance; leakage current; high-density capacitor;

D O I：

10.1016/S1359-6454(03)00051-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties for the new RuTiN barrier material were investigated and compared with those for the TiN barrier. In case of the TiN barrier in the sputtered-(Ba,Sr)TiO3 simple stack-type structure, the TiN film was partially oxidized in the as-deposited state and was almost completely oxidized at 550 degreesC, leading to a degradation of the capacitance. In contrast, the new RuTiN barrier was not oxidized up to 600 degreesC, and exhibited an improved capacitance of >30 fF/cell, although the leakage current is very high (similar to10(-9) A/cell) due to low work function (4.43 eV). Correspondingly, the diffusion barrier performance of new RuTiN film, as an oxygen diffusion barrier for high-density volatile capacitor, is better than that of the TiN barrier. (C) 2003 Published by Elsevier Science Ltd on behalf of Acta Materialia Inc.

引用

页码：2531 / 2538

页数：8

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