Atomic Layer Deposition of Two-Dimensional Layered Materials: Processes, Growth Mechanisms, and Characteristics

被引:123
|
作者
Cai, Jiyu [1 ]
Han, Xiaoxiao [1 ,2 ]
Wang, Xin [1 ,2 ]
Meng, Xiangbo [1 ,2 ]
机构
[1] Univ Arkansas, Dept Mech Engn, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Ctr Adv Surface Engn, Fayetteville, AR 72701 USA
基金
美国国家科学基金会;
关键词
LOW-TEMPERATURE DEPOSITION; TRANSITION-METAL DICHALCOGENIDES; HEXAGONAL BORON-NITRIDE; BAND-GAP TRANSITION; OXIDE THIN-FILMS; TUNGSTEN DISULFIDE; ELECTRONIC-STRUCTURE; MOLYBDENUM OXIDE; WAFER-SCALE; GETE FILMS;
D O I
10.1016/j.matt.2019.12.026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Since the discovery of graphene, there has been an ever-increasing interest in two-dimensional (2D) layered materials with exceptional properties. To this end, a variety of synthesis methods have been developed. However, it is still challenging to produce large-scale high-quality single-crystalline 2D materials. In this regard, atomic layer deposition (ALD) has recently shown great promise and has stimulated more and more research efforts, ascribed to its unique growth mechanism and distinguished capabilities to achieve nanoscale films with excellent uniformity, unrivaled conformality, and atomic-scale controllability. This review comprehensively summarizes recent progress on ALD for 2D atomic sheets, including 25 different materials and more than 80 ALD processes. This work highlights different technical routes to ALD, their precise controllability, and their underlying principles for 2D materials. It is expected that this work will help boost more research efforts for controllable growth of high-quality 2D materials via ALD.
引用
收藏
页码:587 / 630
页数:44
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