Intersubband optics in GaN-based nanostructures - physics and applications

被引：12

作者：

Tchernycheva, M. ^{[1
]}

Nevou, L. ^{[1
]}

Vivien, L. ^{[1
]}

Julien, F. H. ^{[1
]}

Kandaswamy, P. K. ^{[2
]}

Monroy, E. ^{[2
]}

Vardi, A. ^{[3
]}

Bahir, G. ^{[3
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] CEA, INAC, SP2M, NPSC, F-38054 Grenoble, France

[3] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 07期

关键词：

III-V semiconductors; optical properties; quantum wells; GAN/ALN QUANTUM-WELLS; MU-M; ABSORPTION; TRANSITIONS; MODULATION; BAND;

D O I：

10.1002/pssb.200983694

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper we review the recent achievements in terms of GaN/AlGaN-based intersubband (ISB) physics and devices. We first discuss the design issues and in particular the band bending effect and its influence on the ISB absorption. We then illustrate recent achievements in terms of III-nitride ISB devices with special emphasis on electro-optical modulator and a quantum cascade detector operating in the near-infrared. We show that these devices offer high frequency response at telecommunication wavelengths. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1622 / 1627

页数：6

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