Resonant tunnelling and intersubband absorption in AIN - GaN superlattices

被引：1
|
作者：
Baumann, E [1 ]
Giorgetta, FR [1 ]
Hofstetter, D [1 ]
Wu, H [1 ]
Schaff, WJ [1 ]
Eastman, LF [1 ]
Kirste, L [1 ]
机构：
[1] Univ Neuchatel, CH-2000 Neuchatel, Switzerland
来源：
E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期
关键词：
D O I：
10.1002/pssc.200460611
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures at 1.55 mu m. For high barriers, the photovoltage peaks at a higher energy than the absorbance spectrum due to the decrease of the tunnelling probability. The observed photovoltage is thus the macroscopic manifestation that the 2-dimensional electron gas at the top of the superlattice gets depleted by a vertical transport of electrons. (c) 2005 WILEY-VCH Verlag GmbH W Co. KGaA, Weinheim.
引用
收藏
页码：1014 / 1018
页数：5
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