SJ and TJ Gaas concentrator solar cells on SI virtual wafers

被引：1

作者：

Gabetta, G ^{[1
]}

Flores, C ^{[1
]}

Campesato, R ^{[1
]}

Casale, C ^{[1
]}

Timò, G ^{[1
]}

Smekens, G ^{[1
]}

Vanbegin, J ^{[1
]}

von Kanel, H ^{[1
]}

Isella, G ^{[1
]}

机构：

[1] CESI SpA, Milan, Italy

来源：

CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488266

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

GaAs solar cells grown on Si wafers have been investigated for many years to find a way to reduce the solar cell cost, by replacing the expensive Ge substrates with a low cost material and less heavy [1,2]. Both space and terrestrial applications are interested in the development of this type of technology [3]. This paper is presenting the most recent results on this subject. The preparation of so called Si:Ge "virtual wafers" was carried out with a new approach for Ge deposition on Si wafers, originally developed for microelectronic. Both single junction and triple junction GaAs solar cells were manufactured and preliminary tested. Solar cells ranging from a size of 8 cm(2) down to 1 mm(2) were manufactured for terrestrial applications in concentrator systems.

引用

页码：850 / 853

页数：4

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