Subnanoscale Localization of Rare-Earth-Ion in Doped Crystal via Electromagnetically Induced Transparency

被引:0
|
作者
Verma, Onkar N. [1 ]
Roy, Sourabh [1 ]
机构
[1] Natl Inst Technol Warangal, Dept Phys, Warangal 506004, Telangana, India
关键词
D O I
10.23919/moc46630.2019.8982862
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a subnanoscale localization of three-level.-type rare-rarth-ion doped in crystal via coupling it to a Gaussian probe beam and a Laguerre-Gaussian control beam in the dark state of electromagnetically induced transparency. This opens a possibility for coherent manipulation and spatial selection of individual solid qubits for quantum information science applications.
引用
收藏
页码:272 / 273
页数:2
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