Microstructure scaling in metal-insulator-transitions of atomic layer deposited VO2 films

被引：1

作者：

Niang, K. M. ^{[1
]}

Bai, G. ^{[1
]}

Lu, H. ^{[1
]}

Robertson, J. ^{[1
]}

机构：

[1] Univ Cambridge, Engn Dept, Cambridge CB2 1PZ, England

来源：

SOLID-STATE ELECTRONICS | 2021年 / 183卷

关键词：

Atomic layer deposition; Metal insulator transition; Grain size; Hysteresis; Sputtering; Pulsed laser deposition; Scaling; Large area growth;

D O I：

10.1016/j.sse.2021.108046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of VO2 are grown by atomic layer deposition onto low-cost amorphous substrates and compared to sputtered and pulsed laser deposited films on similar substrates. They were each analyzed in terms of the scaling with grain size of the resistivity change across the metal insulator transition, its thermal hysteresis and its full width at half maximum of the slopes. This finds a similar dependence and suggests that the cause is the sintering processes of these films during their deposition and annealing, which determine their microstructural properties.

引用

页数：3