Novel Continuous Inverse Class F Power Amplifier for High Power 5G Macro Base Station Application

被引:6
|
作者
Sharma, Tushar [1 ]
Zhu, Ning [1 ]
Roberts, Jeffrey [1 ]
Holmes, Damon H. [1 ]
机构
[1] NXP Semicond, Chandler, AZ 85224 USA
关键词
broadband; input harmonic; gallium nitride (GaN); harmonic termination; inverse class F; integrated passive device (IPD); power amplifier; high power; power density; integrated passive device; INPUT;
D O I
10.1109/IMS19712.2021.9574940
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper explores the design space and implementation of a Class F-1 PA using an in-package solution for sub-6 GHz macro base station applications. Special care is taken to select a second harmonic source termination that simultaneously provides high power density, high efficiency and smooth AM/AM linearity properties. A compact, pre-matched gallium-nitride (GaN) Class F-1 amplifier is manufactured, as proof-of-concept, using integrated passive devices (IPDs) and bond wires to demonstrate its application to high power broadband cellular infrastructure. The prototype demonstrated 14W/mm at 48V supply, 55.43 dBm (350 W) total peak power with the highest efficiency of 75 % and a large signal gain of 19 dB across 20% fractional RF bandwidth from 1.805 - 2.2 GHz.
引用
收藏
页码:729 / 731
页数:3
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