A Generic Gate Driver for SiC MOSFETs with adjustable Positive and Negative Rail Voltage

被引：0
|
作者：
Li, Yeo Howe [1 ]
Kanamarlapudi, Venkata Ravi Kishore [1 ]
机构：
[1] Nanyang Technol Univ ERIAN, Energy Res Inst, Autonomous Vehicles & Electromobil AVEM Grp, Singapore, Singapore
来源：
2018 ASIAN CONFERENCE ON ENERGY, POWER AND TRANSPORTATION ELECTRIFICATION (ACEPT) | 2018年
关键词：
SiC MOSFET; gate driver;
D O I：
暂无
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
SiC MOSFETs are well known for possessing lower losses compared with silicon MOSFETS or IGBTs. In order to drive them efficiently, suitable drivers must be designed. However, most commercially available drivers and drivers in literature are suitable for only a limited range of SiC MOSFETs due to limitations on the MOSFET's gate voltage ratings. Hence, the drivers do not allow the designer to easily experiment with different SiC MOSFET models. In this paper, a generic SiC gate driver with adjustable positive and negative voltage rail is presented. The performance of the proposed driver is compared with a commercially available driver through experiment and it is shown that the proposed gate driver is able to drive the chosen SiC MOSFET more efficiently.
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页数：5
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