On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate

被引：10

作者：

Whiteside, Matthew ^{[1
]}

Arulkumaran, Subramaniam ^{[2
]}

Chng, Soon Siang ^{[1
]}

Shakerzadeh, Maziar ^{[1
]}

Teo, Hang Tong Edwin ^{[1
]}

Ng, Geok Ing ^{[1
,2
]}

机构：

[1] Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Temasek Labs NTU, Res Techno Plaza,50 Nanyang Dr, Singapore 637553, Singapore

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 06期

关键词：

2DEG Properties; HiPIMS; AlGaN; GaN; Boron Nitride; HEXAGONAL-BORON-NITRIDE; SURFACE PASSIVATION; CURRENT COLLAPSE; FEW-LAYER; GAN; GROWTH;

D O I：

10.35848/1882-0786/ab92ee

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertically ordered hexagonal boron nitride (h-BN) films were successfully sputtered on AlGaN/GaN heterostructure (HS) using high power impulse magnetron sputtering at room temperature. The h-BNs vertical ordering along the (0002) plane was confirmed using high-resolution transmission electron microscopy. After the h-BN deposition, degradation of two-dimensional electron gas (2DEG) properties was observed in AlGaN/GaN HS. Full recovery of 2DEG mobility, along with an improvement in sheet resistance and an increase in sheet carrier concentration was obtained after rapid thermal annealing at 500 degrees C for 300 s in a N2 atmosphere, which is due to the reduction of sputtering related structural damage.

引用

页数：6

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