High-speed SiGeHBTs and their applications

被引：1
|
作者：
Washio, K [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
来源：
APPLIED SURFACE SCIENCE | 2004年 / 224卷 / 1-4期
关键词：
bipolar transistors; heterostructure; epitaxy; crystal growth; microwave circuits; monolithic integrated circuits; optical communication systems;
D O I：
10.1016/j.apsusc.2003.08.059
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The structure of a high-speed self-aligned SiGe heterojunction bipolar transistor (HBT) was optimized through investigations of its characteristics related to the collector-base and emitter-base junctions. The SiGe HBT was fabricated by selective-epitaxial growth (SEG). As a result of the optimization, its cutoff frequency was increased to 130 GHz and its ECL gate-delay time was reduced to 5.3 ps. Based on this SiGe HBT, an IC chipset for 40 Gb/s optical-fiber-links, a 5.8 GHz electronic-toll-collection transceiver IC, and high-speed frequency divider ICs (operating up to the millimeter-wave band) were developed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：306 / 311
页数：6
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