Temperature stable high K microwave dielectric ceramics of Bi3NbO7 doped by V2O5

Low firing microwave dielectric ceramics Bi-3(Nb1-xVx)O-7 (x=0.0, 0.1, 0.2, 0.3, and 0.5) were prepared by the solid state reaction method. Sintering behavior, crystalline structure, microstructure, and microwave dielectric properties were studied. Temperature stable low-firing microwave dielectric ceramics with high permittivity were obtained in the Bi-3(Nb1-x,V-x)O-7 system when x=0.1 and 0.2. The Bi-3(Nb0.9V0.1)O-7 and Bi-3(Nb0.8V0.2)O-7 ceramics sintered at 870 degrees C for 2 h were found to possess high permittivity of 80 and 76, Qf (quality factor) values of 615 and 460 GHz, and TCF (temperature coefficient of frequency) values of -22 and+3.3 ppm/degrees C, respectively. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.