Radiation Effect in CMOS Microprocessor Exposed to Intense Mixed Neutron and Gamma Radiation Field

被引：0

作者：

Jin Xiaoming ^{[1
]}

Ma Qiang ^{[1
]}

Qi Chao ^{[1
]}

Yang Shanchao ^{[1
]}

Li Ruibin ^{[1
]}

Bai Xiaoyan ^{[1
]}

Liu Yan ^{[1
]}

Wang Guizhen ^{[1
]}

Lin Dongsheng ^{[1
]}

Chen Wei ^{[1
]}

Ding Lili ^{[1
]}

机构：

[1] Northwest Inst Nucl Technol, Xian 710024, Shanxi Prov, Peoples R China

来源：

2013 14TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2013年

关键词：

gamma irradiation; microprocessor; neutron irradiation; total ionizing dose effect;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Radiation effects of microprocessor in mixed neutron and gamma rays radiation field were researched. The ionizing energy deposited by neutron in Geant4 simulation accords with experimental data. Qualitative correlation is demonstrated between transistors and circuit.

引用

页数：4

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