Modeling of a 20 W GaN HEMT Using QPZD Model

被引：0

作者：

Yu, Xiuling ^{[1
]}

Mao, Shuman ^{[1
]}

Xie, Xiaoqiang ^{[1
]}

Xu, Yuehang ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu, Peoples R China

来源：

2020 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION (NEMO 2020) | 2020年

基金：

中国国家自然科学基金;

关键词：

GaN HEMT; QPZD; high-power; pulse; LARGE-SIGNAL MODEL; COMPACT MODEL; ALGAN/GAN;

D O I：

10.1109/NEMO49486.2020.9343458

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A quasi-physical zone division (QPZD) large signal model for GaN HEMT operating on pulse-mode was established. A 20 W high-power GaN HEMT with power-bar structure, fabricated by in-house 0.4 um AlGaN/GaN HEMT process, is used for validation. All the measured data are fulfilled by an on-wafer load pull measurement system. The results show that good agreements between simulations and measurements have been achieved on pulse I-V, multi-bias S parameters, and large signal performance. The results of this paper show that the QPZD model works well for high power transistors at pulse excitation condition.

引用

页数：4

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