Instantaneous optical modulation in bulk GaAs semiconductor microcavities

被引：8

作者：

Sanchez, S ^{[1
]}

De Matos, C ^{[1
]}

Pugnet, M ^{[1
]}

机构：

[1] CNRS, Lab Anal & Architecture Syst, F-31077 Toulouse, France

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 24期

关键词：

D O I：

10.1063/1.1379783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Picosecond pump-probe experiments at room temperature on a bulk GaAs microcavity are presented. The microcavity device is designed to adjust the cavity mode energy 15 meV below the band gap energy of the intracavity bulk GaAs material. For low pump-energy densities (similar to muJ/cm(2)), ultrafast modulation of the reflectivity is demonstrated due to the purely coherent refractive index change. A 5:1 contrast ratio is achieved and shows the potential of the semiconductor microcavities for implementation in ultrafast all optical switching. (C) 2001 American Institute of Physics.

引用

页码：3779 / 3781

页数：3

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