Interface and strain effects on the fabrication of suspended CVD graphene devices

被引：11
|
作者：
Aydin, O. I. [1 ]
Hallam, T. [2 ]
Thomassin, J. L. [3 ]
Mouis, M. [1 ]
Duesberg, G. S. [2 ]
机构：
[1] Grenoble INP Minatec, IMEP LAHC, F-38016 Grenoble, France
[2] Univ Dublin Trinity Coll, CRANN, Dublin 2, Ireland
[3] CEA INAC, SPSMS, F-38054 Grenoble 9, France
来源：
SOLID-STATE ELECTRONICS | 2015年 / 108卷
关键词：
CVD graphene; Suspended beams; Processing technology; Mechanical strain; Folds; Raman; AFM; RAMAN-SPECTROSCOPY; LARGE-AREA; SCATTERING; MONOLAYER; FILMS;
D O I：
10.1016/j.sse.2014.12.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is known that the fabrication of graphene NEMS raises several technological issues. The most mentioned among these is beam collapse due to the capillary effects. However, we found that controlling the quality of the interface of graphene and the etch mask requires at least equal attention. By taking this into account, we succeeded developing a robust route for the fabrication of suspended graphene structures, using technological steps compatible with large-scale fabrication. AFM and Raman characterization results are used to probe suspension, added defects and strain evolution during the process. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：75 / 83
页数：9
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