Effects of Annealing Temperature on Structural and Optical Properties Of CIGS Thin Films for Using in Solar Cell Applications

被引:2
|
作者
Mankoshi, Mohammed Abdulhur Kadhim [1 ]
Mustafa, Falah I. [2 ]
Hintaw, Nora J. [1 ]
机构
[1] Kerbala Univ, Coll Sci, Dept Phys, Kerbala, Iraq
[2] Higher Educ & Sci Res Minist, Solar Energy Res Ctr, Renewable Energy Directorate, Baghdad, Iraq
关键词
D O I
10.1088/1742-6596/1032/1/012019
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
A copper indium0.5gallium0.5selenide2 thin films (CIGS) were deposited at room temperature on glass substrate by thermal evaporation technique. The deposited film were annealed at different annealing temperature (293, 100, 200 and 300)degrees C. The effect of annealing temperature on structural, optical and electrical properties CIGS films were studied by XRD, UV-Visible absorbance and Hall effect measurements. It is found that the crystallinety enhanced, optical energy gap increases and electrical conductivity decrease with increasing annealing temperature. Three design of solar cells, based on CIGS, were examined to reach the suitable solar cell with higher efficiency.
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页数:8
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