Efficient Supply Modulator for Wide-Band Envelope Elimination and Restoration Power Amplifiers

A fast transient response supply modulator has been realized and verified in envelope elimination and restoration (EER) power amplifier. The analysis and detailed design of the proposed architecture is presented. Simulation results, in 130-nm CMOS technology, show that the proposed supply modulator achieves better linearity and efficiency compared to the conventional hybrid mode supply modulators or hybrid EER when signal frequency increases. Adjacent channel leakage ratio requirements are met for an LTE signal with 5 MHz, 10 MHz, and 20 MHz BW with error vector magnitude less than 3 and efficiency of 79, 73, and 67, respectively at an output power of 0.45 W. Post-layout simulations are performed across different process corners and the effects of real off-chip components and routes are taken into consideration to verify the robustness of the proposed solution.