High Signal-to-Noise Ratio Avalanche Photodiodes With Perimeter Field Gate and Active Readout

被引：12

作者：

Dandin, Marc ^{[1
,2
]}

Abshire, Pamela ^{[2
,3
]}

机构：

[1] Univ Maryland, Fischell Dept Bioengn, College Pk, MD 20742 USA

[2] Univ Maryland, Syst Res Inst, College Pk, MD 20742 USA

[3] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期

关键词：

Avalanche breakdown; avalanche photodiodes (APDs); CMOS TECHNOLOGY; PHOTON; DIODE;

D O I：

10.1109/LED.2012.2186112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter describes an avalanche photodiode (APD) fabricated in a 0.5-mu m CMOS process. In Geiger mode, the APD had an area-normalized dark count rate as low as 2 Hz/mu m(2) at room temperature. Its signal-to-noise ratio (SNR) increased by an order of magnitude as a result of perimeter field gating. We demonstrate that under high-illumination conditions, perimeter field gating maximizes SNR, whereas under low-light conditions, it maximizes sensitivity.

引用

页码：570 / 572

页数：3

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