The damage effect of CW COIL to PV InSb detector

The performance change of photovoltaic(PV) indium stibium(InSb) detector illuminated by continuous wave(CW) chemical oxygen iodine laser(COIL) with different power density was measured and the damage threshold interval of the detector was achieved to be 26(0.89S) similar to 113(1.4S)W/cm(2). Using the integrating sphere technology,the thermal coupling coefficient of InSb crystal material to CW COIL was measured to be 0.664 +/- 0.004. Compared with the theoretical result the thermal coupling coefficient measured was a litter bigger due to the effect of the surface defect of InSb material.The principle and damage mechanism of PV InSb detector were reviewed.The temperature rise and performance change of PV InSb detector illuminated by CW COIL were calculated with one-dimensional thermal model.The calculated results was consistent with the experimental results.