Reliability physics study for semiconductor-polymer device development

被引：6
|
作者：
Teixeira, DGD
Laranjeira, JMG
de Vasconcelos, EA
da Silva, EF
de Azevedo, WM
Khoury, HJ
机构：
[1] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil
[2] Univ Fed Pernambuco, Dept Nucl Energy, BR-50670901 Recife, PE, Brazil
[3] Univ Fed Pernambuco, Dept Quim Fundamental, BR-50670901 Recife, PE, Brazil
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
reliability physics; silicon-polyaniline heterojunctions; fabrication;
D O I：
10.1016/S0026-2692(03)00109-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We discuss several aspects of the reliability physics of silicon-polyaniline heterojunctions, such as degradation effects induced by local heating, charge trapping and temperature changes. The results further confirm the quality of the devices electrical characteristics and their suitability for radiation and gas sensors applications. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：713 / 715
页数：3
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