A simple approach to structural stability of semiconductors and their interfaces

被引:12
|
作者
Ito, T
Shiraishi, K
Taguchi, A
机构
[1] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan
[2] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
crystal structure; interfaces; phase diagrams; semiconducting materials;
D O I
10.1016/S0022-0248(01)00725-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The relative stability between wurtzite and zinc-blende structures in semiconductors is systematically investigated using a simple formula for calculating the energy difference between them. Using the well-known values of ionicity and lattice parameter for semiconductors, the energy formula gives good estimates of thc energy difference for group IV, III-V and II-VI semiconductors. The calculated energy differences agree well with those obtained by ab initio calculations ill thr literature. A simple criterion for wurtzite-zinc-blende polytypes in semiconductors is extracted in terms of ionicity from the formula. The criterion is also applied to the structural stability of GaN at various hetero-interfaces. (C) 2001 Elsevier Science B,V. All rights reserved.
引用
收藏
页码:366 / 370
页数:5
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