A correlation study of layer growth rate, thickness uniformity, stoichiometry, and hydrogen impurity level in HfO2 thin films grown by ALD between 100 °C and 350 °C

被引：37

作者：

Blaschke, D. ^{[1
,2
,3
]}

Munnik, F. ^{[1
]}

Grenzer, J. ^{[1
]}

Rebohle, L. ^{[1
]}

Schmidt, H. ^{[2
]}

Zahn, P. ^{[1
]}

Gemming, S. ^{[1
,3
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01328 Dresden, Germany

[2] Leibniz Inst Photon Technol, Albert Einstein Str 9, D-07745 Jena, Germany

[3] TU Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

来源：

APPLIED SURFACE SCIENCE | 2020年 / 506卷

关键词：

Atomic layer deposition; Tetrakis(dimethylamido)hafnium; Hafnium dioxide; Elastic recoil detection analysis; Hydrogen impurity level; Grazing incidence X-ray diffraction; X-RAY REFLECTIVITY; ELECTRICAL-PROPERTIES; DEPOSITION; HAFNIUM; O-3; DEPTH; SILICON; IMPACT; TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM; OXIDANT;

D O I：

10.1016/j.apsusc.2019.144188

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hafnium oxide was deposited from tetrakis(dimethylamino)hafnium (TDMAHf) and water by atomic layer deposition (ALD) on heated 4 '' Si wafers covered with native oxide in the temperature range from 100 degrees C to 350 degrees C. Optimized self-limiting ALD reaction and smallest hydrogen impurity level have been realized for a substrate temperature of 300 degrees C. The stoichiometry of deposited films and hydrogen impurity level were measured by elastic recoil detection analysis. The hafnium to oxygen ratio showed the expected 1:2 value. Besides hydrogen, no other impurities could be detected. Furthermore, a strong correlation between the growth rate per cycle (GPC), film uniformity and level of hydrogen impurities was observed. In addition, the characterization of the crystal structure showed the appearance of some crystallites in an amorphous matrix already for a growth temperature of 250 degrees C and a pure crystalline layer at a growth temperature of 350 degrees C. The increased crystallinity with increasing growth temperature was attributed to a higher seed concentration and a nearly constant crystal size.

引用

页数：7

共 2 条

[1] A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO2 thin films grown by ALD between 100 and 300 °C
Xia, Bingbing
Ganem, Jean-Jacques
Briand, Emrick
Steydli, Sebastien
Baron-Wiechec, Aleksandra Wanda
Vickridge, Ian
VACUUM, 2023, 216
[2] Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (≤100°C) using O3 as an oxygen source
Kim, Jeong Hwan
Park, Tae Joo
Kim, Seong Keun
Cho, Deok-Yong
Jung, Hyung-Suk
Lee, Sang Young
Hwang, Cheol Seong
APPLIED SURFACE SCIENCE, 2014, 292 : 852 - 856

← 1 →