Nucleation of Ga2O3 nanocrystals in the K2O-Ga2O3-SiO2 glass system

被引:35
|
作者
Ceccato, R
Dal Maschio, R
Gialanella, S
Mariotto, G
Montagna, M
Rossi, F
Ferrari, M
Lipinska-Kalita, KE
Ohki, Y
机构
[1] Univ Trent, Ist Nazl Fis Mat, I-38050 Trent, Italy
[2] Univ Trent, Dipartimento Ingn Mat, I-38050 Trent, Italy
[3] Univ Trent, Dipartimento Fis, I-38050 Trent, Italy
[4] CNR, Ctr Fis Stati Aggregati, I-38050 Trent, Italy
[5] Washeda Univ, Dept Elect Elect & Comp Engn, Shinjuku Ku, Tokyo 1698555, Japan
关键词
D O I
10.1063/1.1365426
中图分类号
O59 [应用物理学];
学科分类号
摘要
A multitechnique approach, consisting of x-ray diffraction, differential thermal analysis, low frequency Raman scattering from the acoustic vibrations of nanoclusters, and transmission electron microscopy associated with selected area diffraction, has been used to study the nucleation and crystallization processes in SiO2-Ga2O3-K2O glasses. The specific aim was to determine the structure and the size distribution of nanoparticles embedded in the glass matrix. It has been found that nearly spherical nanocrystals of beta -Ga2O3, with a size of similar to2-3 nm, nucleate during thermal treatments at 900 degreesC. Crystallization was observed after annealing at higher temperature. The amount of the crystalline phase and the mean size of the nanocrystals increased with heat treatment, time and temperature. beta -Ga2O3 was the only crystalline phase to appear in all glass samples. (C) 2001 American Institute of Physics.
引用
收藏
页码:2522 / 2527
页数:6
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