Influence of p/i interface treatment on the flexible thin film solar cells for application in building integrated photovoltaics

被引：1
|
作者：
Lei Jin Song [1 ,2 ]
Zou Yin Sheng [2 ]
Zhang Zhao Qiang [1 ]
机构：
[1] Southwest Univ Sci & Technol, Coll Civil Engn & Architecture, Mianyang 621010, Sichuan, Peoples R China
[2] Hunan Univ, Coll Civil Engn, Changsha 410082, Hunan, Peoples R China
来源：
APPLICATIONS OF ENGINEERING MATERIALS, PTS 1-4 | 2011年 / 287-290卷
关键词：
building integrated photovoltaics; flexible thin film solar cells; p/i interface; H plasma treatment; nucleation layer; OPEN CIRCUIT VOLTAGE; P-I-N; SILICON; DEPOSITION; SI;
D O I：
10.4028/www.scientific.net/AMR.287-290.1259
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nip type flexible a-Si solar cells for application in building integrated photovoltaics (BIPV) were deposited by plasma enhanced chemical vapor deposition (PECVD) method. In order to improve the efficiency and stability of the device, p-type microcrystalline silicon (mu c-Si:H) film was used as the window layers. H plasma treatment was applied on the p/i interface and nucleation layer was introduced to enhance the deposition of p-type mu c-Si:H film on the surface of a-Si:H. Results suggest that with the application of H plasma treatment and the nucleation layer introduction, high quality p-type pc-Si:H film and high efficiency flexible solar cells were obtained.
引用
收藏
页码：1259 / +
页数：2
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