Mechanical Behavior of Silicon Carbide Under Static and Dynamic Compression

被引:23
|
作者
Zhang, D. [1 ]
Zhao, L. G. [1 ]
Roy, A. [1 ]
机构
[1] Loughborough Univ Technol, Wolfson Sch Mech Elect & Mfg Engn, Loughborough LE11 3TU, Leics, England
关键词
silicon carbide; mechanical behavior; static compression; SHPB tests; plastic deformation; loading rate; ALUMINUM NITRIDE; SINGLE-CRYSTALS; CERAMICS; STRENGTH; PRESSURE; FRACTURE; DEFECTS; FAILURE; IMPACT; DAMAGE;
D O I
10.1115/1.4040591
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
This paper compared the mechanical behavior of 6H SiC under quasi-static and dynamic compression. Rectangle specimens with a dimension of 3 x 3 x 6mm(3) were used for quasi-static compression tests under three different loading rates (i.e., 10(-5) /s, 10(-4)/s, and 10(-3)/s). Stress-strain response showed purely brittle behavior of the material which was further confirmed by scanning electron microscopy (SEM)/transmission electron microscopy (TEM) examinations of fractured fragments. For dynamic compression, split Hopkinson pressure bar (SHPB) tests were carried out for cubic specimens with a dimension of 6 x 6 x 4mm(3). Stress-strain curves confirmed the occurrence of plastic deformation under dynamic compression, and dislocations were identified from TEM studies of fractured pieces. Furthermore, JH2 model was used to simulate SHPB tests, with parameters calibrated against the experimental results. The model was subsequently used to predict strength and plasticity-related damage under various dynamic loading conditions. This study concluded that, under high loading rate, silicon carbide (SiC) can deform plastically as evidenced by the development of nonlinear stress-strain response and also the evolution of dislocations. These findings can be explored to control the brittle behavior of SiC and benefit end users in relevant industries.
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页数:10
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