Secondary-electron emission effects in plasma immersion ion implantation with dielectric substrates

被引:0
|
作者
Li, XC [1 ]
Wang, YN [1 ]
机构
[1] Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat, Dalian 116023, Peoples R China
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暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using a dynamic sheath model, we have studied the secondary-electron emission effects at one-dimensional planar dielectric surface in plasma immersion ion implantation. The temporal evolution of the sheath thickness, the surface potential of dielectric, and the ions dose accumulated on the dielectric surface are obtained. The numerical results demonstrate that the charging effects are greatly enhanced by the secondary electron emission effects, so the sheath thickness becomes thinner, the surface potential of dielectric decreases fast and the ions dose accumulated on the dielectric surface significantly increases.
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页码:364 / 366
页数:3
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